发明授权
US08379471B2 Refresh operation control circuit, semiconductor memory device including the same, and refresh operation control method
失效
刷新操作控制电路，包括其的半导体存储器件和刷新操作控制方法
- 专利标题： Refresh operation control circuit, semiconductor memory device including the same, and refresh operation control method
- 专利标题（中）： 刷新操作控制电路，包括其的半导体存储器件和刷新操作控制方法
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申请号： US12974562申请日： 2010-12-21
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公开(公告)号： US08379471B2公开(公告)日： 2013-02-19
- 发明人: Ki-Chang Kwean
- 申请人： Ki-Chang Kwean
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2010-0107186 20101029
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A semiconductor memory device includes a bank including a first cell region and a second cell region, an active signal generation unit configured to generate a first row active signal and a second row active signal having different activation periods from each other in response to a refresh command, and an address counting unit configured to count the refresh command and generate a row address, wherein a word line of the first cell region designated by the row address is activated when the first row active signal is activated, and a word line of the second cell region designated by the row address is activated when the second row active signal is activated.
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