Invention Grant
- Patent Title: Unidirectional MOSFET and applications thereof
- Patent Title (中): 单向MOSFET及其应用
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Application No.: US12554545Application Date: 2009-09-04
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Publication No.: US08363437B2Publication Date: 2013-01-29
- Inventor: Chih-Liang Wang , Ching-Sheng Yu , Po-Tai Wong
- Applicant: Chih-Liang Wang , Ching-Sheng Yu , Po-Tai Wong
- Applicant Address: TW Jhonghe, Taipei County TW Keelung
- Assignee: GlacialTech, Inc.,Chih-Liang Wang
- Current Assignee: GlacialTech, Inc.,Chih-Liang Wang
- Current Assignee Address: TW Jhonghe, Taipei County TW Keelung
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW97135084A 20080912
- Main IPC: H02H7/125
- IPC: H02H7/125

Abstract:
Owing to the property of bidirectional conduction under the saturation mode, synchronous rectifiers in conventional power converters usually suffer from a reverse current under light loads or a shoot-through current under heavy loads. The reverse current may degrade the converter efficiency and the shoot-through current may damage synchronous rectifiers. The present invention discloses a unidirectional metal oxide semiconductor field effect transistor (UMOS), which comprises a metal oxide semiconductor field effect transistor (MOS), a current detection circuit and a fast turn-off circuit. The current detection circuit detects the direction of the current flowing through the MOS. When a forward current is detected, the fast turn-off circuit is disabled and the channel of the MOS can be formed. When a reverse current is detected, the fast turn-off circuit is enabled and the channel of the MOS cannot be formed. This UMOS can be applied, but not limited, to synchronous rectifiers to detect the occurrence of a reverse current or a shoot-through current and fast turn off the channel of the MOSFET.
Public/Granted literature
- US20100067275A1 UNIDIRECTIONAL MOSFET AND APPLICATIONS THEREOF Public/Granted day:2010-03-18
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