发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13270253申请日： 2011-10-11
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公开(公告)号： US08362551B2公开(公告)日： 2013-01-29
- 发明人: Franz Hirler , Walter Rieger , Andrew Wood , Mathias Born , Ralf Siemieniec , Jan Ropohl , Martin Poelzl , Oliver Blank , Uli Hiller , Oliver Haeberlein , Rudolf Zelsacher , Maximilian Roesch , Joachim Krumrey
- 申请人： Franz Hirler , Walter Rieger , Andrew Wood , Mathias Born , Ralf Siemieniec , Jan Ropohl , Martin Poelzl , Oliver Blank , Uli Hiller , Oliver Haeberlein , Rudolf Zelsacher , Maximilian Roesch , Joachim Krumrey
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
摘要：
In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
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