Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12954127Application Date: 2010-11-24
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Publication No.: US08362457B2Publication Date: 2013-01-29
- Inventor: Sook-Joo Kim , Min-Gyu Sung , Deok-Sin Kil
- Applicant: Sook-Joo Kim , Min-Gyu Sung , Deok-Sin Kil
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0032396 20100408
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A semiconductor device includes a lower electrode, a variable resistance layer disposed over the lower electrode, the variable resistance layer is included a reactive metal layer being interposed between a plurality of oxide resistive layers and an upper electrode disposed over the variable resistance layer.
Public/Granted literature
- US20110248236A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-10-13
Information query
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