发明授权
US08347728B2 Stress detection within an integrated circuit having through silicon vias 有权
通过硅通孔的集成电路中的应力检测

  • 专利标题: Stress detection within an integrated circuit having through silicon vias
  • 专利标题(中): 通过硅通孔的集成电路中的应力检测
  • 申请号: US12805025
    申请日: 2010-07-07
  • 公开(公告)号: US08347728B2
    公开(公告)日: 2013-01-08
  • 发明人: Robert Campbell Aitken
  • 申请人: Robert Campbell Aitken
  • 申请人地址: GB Cambridge
  • 专利权人: ARM Limited
  • 当前专利权人: ARM Limited
  • 当前专利权人地址: GB Cambridge
  • 代理机构: Nixon & Vanderhye P.C.
  • 主分类号: G01B7/16
  • IPC分类号: G01B7/16
Stress detection within an integrated circuit having through silicon vias
摘要:
An integrated circuit 2 is formed of multiple wafer layers 4, 6, 8, 10 arranged in a stack and connected with through silicon vias 12. Mechanical strain sensors 26, 28, 30, 32 in the form of ring oscillators are provided proximal to the through silicon vias 12 and detect mechanical strain associated with the through silicon via 12. The measured mechanical strain may be used to dynamically adjust operating parameters of the integrated circuit either as a whole or in regions where the mechanical strain is detected. The operating parameters adjusted can include clock frequency, operating voltage and heat generation.
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