发明授权
- 专利标题: Memory test apparatus and testing method
- 专利标题(中): 记忆测试仪器及测试方法
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申请号: US12990983申请日: 2009-05-07
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公开(公告)号: US08345496B2公开(公告)日: 2013-01-01
- 发明人: Takashi Nakamura
- 申请人: Takashi Nakamura
- 申请人地址: JP Tokyo
- 专利权人: Advantest Corporation
- 当前专利权人: Advantest Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Ladas & Parry, LLP
- 优先权: JP2008-123353 20080509
- 国际申请: PCT/JP2009/002011 WO 20090507
- 国际公布: WO2009/136503 WO 20091112
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
A refresh control circuit receives an interrupt signal, which is a request to refresh DRAM (Dynamic Random Access Memory) and which is asserted at predetermined timings. The refresh control circuit counts the number of times the interrupt signal is asserted, and asserts an interrupt subroutine start signal, which is an instruction to refresh the DRAM, in an idle state in which the DRAM is accessible from an external circuit, for a number of times that is equal to the number of times thus counted. When the interrupt subroutine start signal is asserted, a refresh circuit executes a predetermined interrupt subroutine, and supplies a refresh pattern to the DRAM.
公开/授权文献
- US20110116333A1 MEMORY TEST APPARATUS AND TESTING METHOD 公开/授权日:2011-05-19
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