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US08343845B2 Methods of manufacturing capacitor structures and methods of manufacturing semiconductor devices using the same 有权
制造电容器结构的方法和使用其制造半导体器件的方法

Methods of manufacturing capacitor structures and methods of manufacturing semiconductor devices using the same
摘要：
A capacitor structure includes a plurality of lower electrodes on a substrate, the lower electrodes having planar top surfaces and being arranged in a first direction to define a lower electrode column, a plurality of lower electrode columns being arranged in a second direction perpendicular to the first direction to define a lower electrode matrix, a plurality of supports on upper sidewalls of at least two adjacent lower electrodes, a dielectric layer on the lower electrodes and the supports, and an upper electrode on the dielectric layer.
摘要（中）：

电容器结构包括在基板上的多个下电极，下电极具有平面顶表面并且沿第一方向布置以限定下电极柱，多个下电极柱沿垂直于第一 限定下电极矩阵的方向，在至少两个相邻的下电极的上侧壁上的多个支撑件，下电极和支撑件上的电介质层，以及介电层上的上电极。

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