发明授权
- 专利标题： Reducing metal pits through optical proximity correction
- 专利标题（中）： 通过光学邻近校正减少金属凹坑
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申请号： US13188166申请日： 2011-07-21
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公开(公告)号： US08341562B1公开(公告)日： 2012-12-25
- 发明人: Jiun-Jie Huang , Chi-Yen Lin , Ling-Sung Wang
- 申请人： Jiun-Jie Huang , Chi-Yen Lin , Ling-Sung Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： G06F17/50
- IPC分类号： G06F17/50
摘要：
A method includes retrieving first layouts of an integrated circuit from a non-transitory computer-readable medium. The first layouts include a via pattern in a via layer, and a metal line pattern in a metal layer immediately over the via layer. The metal line pattern has an enclosure to the via pattern. The enclosure is increased to a second enclosure to generate second layouts of the integrated circuit.
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