Invention Grant
- Patent Title: Magnetoresistive element and magnetic memory
- Patent Title (中): 磁阻元件和磁记忆体
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Application No.: US12233100Application Date: 2008-09-18
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Publication No.: US08299552B2Publication Date: 2012-10-30
- Inventor: Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Katsuya Nishiyama , Tadaomi Daibou , Tatsuya Kishi , Hiroaki Yoda
- Applicant: Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Katsuya Nishiyama , Tadaomi Daibou , Tatsuya Kishi , Hiroaki Yoda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-250283 20070926
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A magnetoresistive element includes a first underlying layer having an NaCl structure and containing a nitride orienting in a (001) plane, a first magnetic layer provided on the first underlying layer, having magnetic anisotropy perpendicular to a film surface, having an L10 structure, and containing a ferromagnetic alloy orienting in a (001) plane, a first nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the first nonmagnetic layer and having magnetic anisotropy perpendicular to a film surface.
Public/Granted literature
- US20090079018A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY Public/Granted day:2009-03-26
Information query
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