发明授权
- 专利标题： Nonvolatile memory device and method of fabricating the same
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US12656681申请日： 2010-02-12
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公开(公告)号： US08299521B2公开(公告)日： 2012-10-30
- 发明人: Jung-hyun Lee , Young-eal Kim , Chang-soo Lee , Dong-joon Ma
- 申请人： Jung-hyun Lee , Young-eal Kim , Chang-soo Lee , Dong-joon Ma
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2009-0011207 20090211
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected.
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