Semiconductor device with silicon carbide channel

Invention Grant

US08283674B2 Semiconductor device with silicon carbide channel 有权

Title translation: 具有碳化硅通道的半导体器件

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Patent Title: Semiconductor device with silicon carbide channel
Patent Title (中): 具有碳化硅通道的半导体器件
Application No.: US12158382

Application Date: 2006-10-26
Publication No.: US08283674B2

Publication Date: 2012-10-09
Inventor: Takeyoshi Masuda , Shinji Matsukawa
Applicant: Takeyoshi Masuda , Shinji Matsukawa
Applicant Address: JP Osaka
Assignee: Sumitomo Electric Industries, Ltd.
Current Assignee: Sumitomo Electric Industries, Ltd.
Current Assignee Address: JP Osaka
Agency: Fish & Richardson P.C.
Priority: JP2006-126432 20060428
International Application: PCT/JP2006/321370 WO 20061026
International Announcement: WO2007/125617 WO 20071108
Main IPC: H01L29/15
IPC: H01L29/15

Semiconductor device with silicon carbide channel

Abstract:

MOSFET is provided with SiC film. SiC film has a facet on its surface, and the length of one period of the facet is 100 nm or more, and the facet is used as channel. Further, a manufacturing method of MOSFET includes: a step of forming SiC film; a heat treatment step of heat-treating SiC film in a state where Si is supplied on the surface of SiC film; and a step of forming the facet obtained on the surface of SiC film by the heat treatment step into a channel. Thereby, it is possible to sufficiently improve the characteristics.

Abstract(Chinese):

MOSFET提供有SiC膜。 SiC薄膜在其表面具有一个刻面，该刻面的一个周期的长度为100nm或更大，并且该刻面用作通道。此外，MOSFET的制造方法包括：形成SiC膜的工序; 在Si膜的表面供给Si的状态下对SiC膜进行热处理的热处理工序; 以及通过热处理步骤将在SiC膜的表面上获得的刻面形成沟道的步骤。由此，可以充分提高特性。

Public/Granted literature

US20090230404A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2009-09-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/12	..按其构成材料的特征区分的
H01L29/15	... · ·带有周期性或准周期性电势变化的结构，如多量子阱、超晶格（应用于光控制的这种结构入G02F1/017；应用于半导体激光器的入H01S5/34）