发明授权
US08279693B2 Programmable tracking circuit for tracking semiconductor memory read current
有权
用于跟踪半导体存储器的可编程跟踪电路读电流
- 专利标题: Programmable tracking circuit for tracking semiconductor memory read current
- 专利标题(中): 用于跟踪半导体存储器的可编程跟踪电路读电流
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申请号: US12757485申请日: 2010-04-09
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公开(公告)号: US08279693B2公开(公告)日: 2012-10-02
- 发明人: Zhongze Wang
- 申请人: Zhongze Wang
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理商 Sam Talpalatsky; Nicholas J. Pauley; Jonathan T. Velasco
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
One example memory device includes a memory array, a sense amplifier, and a tracking circuit. The memory array is formed of a plurality of memory cells. The sense amplifier is for accessing the memory array. The tracking circuit is for tracking memory read current of the memory array. The tracking circuit comprises one or more columns of tracking cells. Each column is coupled to a corresponding bit line to provide a drive current on the bit line for triggering a memory read operation by the sense amplifier. At least one of the columns comprises two tracking cells connected in series to each other.
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