发明授权
US08277600B2 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device
有权
高温接合组合物,基板接合方法和3-D半导体器件
- 专利标题: High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device
- 专利标题(中): 高温接合组合物,基板接合方法和3-D半导体器件
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申请号: US12541594申请日: 2009-08-14
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公开(公告)号: US08277600B2公开(公告)日: 2012-10-02
- 发明人: Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano
- 申请人: Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2008-209197 20080815
- 主分类号: C09J7/02
- IPC分类号: C09J7/02 ; B32B9/04 ; C08L83/00 ; C08L83/04
摘要:
A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer.
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