发明授权
- 专利标题: Semiconductor memory apparatus and method of testing the same
- 专利标题(中): 半导体存储器及其测试方法
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申请号: US12494511申请日: 2009-06-30
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公开(公告)号: US08274852B2公开(公告)日: 2012-09-25
- 发明人: Young Soo Kim
- 申请人: Young Soo Kim
- 申请人地址: KR Gyeonggi-do
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Ladas & Parry LLP
- 优先权: KR10-2009-0009357 20090205
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C29/00
摘要:
A semiconductor memory apparatus includes a sense amplifier coupled to a plurality of bit lines, a switching unit configured to cause the plurality of bit lines to be coupled to a first node in response to a switching signal, a mode selecting unit configured to selectively couple the first node to a pad or a ground terminal in response to a mode selection signal and a testing unit configured to supply current to the pad during a test mode.
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