发明授权
- 专利标题： Level shifter for use with memory arrays
- 专利标题（中）： 电平移位器用于存储器阵列
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申请号： US12849305申请日： 2010-08-03
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公开(公告)号： US08274848B2公开(公告)日： 2012-09-25
- 发明人: Chad A. Adams , Sharon H. Cesky , Elizabeth L. Gerhard , Jeffrey M. Scherer
- 申请人： Chad A. Adams , Sharon H. Cesky , Elizabeth L. Gerhard , Jeffrey M. Scherer
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Dungan & Dungan PC
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
In a first aspect, a level shifter circuit for use in a memory array is provided that includes (1) a first voltage domain powered by a first voltage; (2) a second voltage domain powered by a second voltage; (3) level shifter circuitry that converts an input signal from the first voltage domain to the second voltage domain; and (4) isolation circuitry that selectively isolates the first voltage domain from the second voltage domain so as to selectively prevent current flow between the first voltage domain and the second voltage domain. Numerous other aspects are provided.
公开/授权文献
- US20120033508A1 LEVEL SHIFTER FOR USE WITH MEMORY ARRAYS 公开/授权日：2012-02-09
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