发明授权
- 专利标题： Fully differential, high Q, on-chip, impedance matching section
- 专利标题（中）： 全差分，高Q，片上，阻抗匹配部分
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申请号： US13047699申请日： 2011-03-14
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公开(公告)号： US08274353B2公开(公告)日： 2012-09-25
- 发明人: Carol Barrett , Tom McKay , Subhas Bothra
- 申请人： Carol Barrett , Tom McKay , Subhas Bothra
- 申请人地址： US CA Irvine
- 专利权人： Broadcom Corporation
- 当前专利权人： Broadcom Corporation
- 当前专利权人地址： US CA Irvine
- 代理机构： Sterne, Kessler, Goldstein & Fox, PLLC
- 主分类号： H01F5/00
- IPC分类号： H01F5/00
摘要：
An inductor circuit is disclosed. The inductor circuit includes a first in-silicon inductor and a second in-silicon inductor each having multiple turns. A portion of the multiple turns of the second in-silicon inductor is formed between turns of the first in-silicon inductor. The first and second in-silicon inductors are configured such that a differential current flowing through the first in-silicon inductor and the second in-silicon inductor flows in a same direction in corresponding turns of inductors.
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