发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13224360申请日: 2011-09-02
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公开(公告)号: US08274323B2公开(公告)日: 2012-09-25
- 发明人: Chikako Matsumoto , Kiyoshi Kato
- 申请人: Chikako Matsumoto , Kiyoshi Kato
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2006-354427 20061228
- 主分类号: G05F1/10
- IPC分类号: G05F1/10 ; G05F3/02
摘要:
A semiconductor device includes rectifying elements which are connected in series and has a rectifying function from a first input terminal portion to an output terminal portion; a first wiring and a second wiring, which are connected to a second input terminal portion; and a boosting circuit including a plurality of capacitor elements each having a first electrode, an insulating film, and a second electrode and storing a boosted potential. The plurality of capacitor elements includes a capacitor element in which the first electrode and the second electrode are formed using conductive films, and a capacitor element in which at least the second electrode is formed using a semiconductor film. In the plurality of capacitor elements, at least a capacitor element in a first stage is a capacitor element in which the first electrode and the second electrode are formed using conductive films.
公开/授权文献
- US20120081935A1 SEMICONDUCTOR DEVICE 公开/授权日:2012-04-05
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