发明授权
- 专利标题： Memory device with improved switching speed and data retention
- 专利标题（中）： 具有改进的开关速度和数据保持的存储器件
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申请号： US11078873申请日： 2005-03-11
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公开(公告)号： US08274073B2公开(公告)日： 2012-09-25
- 发明人: Juri Krieger , Stuart Spitzer
- 申请人： Juri Krieger , Stuart Spitzer
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L29/08
- IPC分类号： H01L29/08
摘要：
The present memory device includes first and second electrodes, a passive layer between the first and second electrodes, and an active layer between the passive layer and the second electrode. In undertaking an operation on the memory device, ions moves into within and from within the active layer, and the active layer is oriented so that the atoms of the active layer provide minimum obstruction to the movement of the ions into, within and from the active layer.
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