发明授权
- 专利标题： Semiconductor device and method for manufacturing thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12337134申请日： 2008-12-17
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公开(公告)号： US08273627B2公开(公告)日： 2012-09-25
- 发明人: Yukihiro Utsuno
- 申请人： Yukihiro Utsuno
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 优先权： JP2007-325291 20071217
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor device which includes two trenches formed in a semiconductor substrate, a charge storage layer as an insulator formed on each side surface of the trenches, and separated on a bottom surface thereof, and a bit line formed below the bottom surface of the trenches in the semiconductor substrate. A channel region is formed in the semiconductor substrate from a side surface of one of the two trenches to that of the other trench via an upper surface of a protruding portion between those two trenches. A method for manufacturing the semiconductor device is also provided.
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