发明授权
- 专利标题: Semiconductor light emitting element and manufacturing method thereof
- 专利标题(中): 半导体发光元件及其制造方法
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申请号: US12684109申请日: 2010-01-07
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公开(公告)号: US08270447B2公开(公告)日: 2012-09-18
- 发明人: Naoki Tsukiji , Norihiro Iwai , Keishi Takaki , Koji Hiraiwa
- 申请人: Naoki Tsukiji , Norihiro Iwai , Keishi Takaki , Koji Hiraiwa
- 申请人地址: JP Tokyo
- 专利权人: Furukawa Electric Co., Ltd.
- 当前专利权人: Furukawa Electric Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Solaris Intellectual Property Group, PLLC
- 优先权: JP2009-002793 20090108; JP2010-002399 20100107
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the active layer passes; wherein the first electrode is provided on the semiconductor layer, has an opening through which light from the active layer passes, and comprises a first electrode layer that comes in contact with and is provided on the semiconductor layer, and a second electrode layer that is provided on the first electrode layer, with the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer; and the dielectric layer is provided inside the opening such that the end section on the opening side of the first electrode layer extends from the top of the semiconductor layer to the top of the dielectric layer.
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