发明授权
- 专利标题: Voltage discharge circuits and methods
- 专利标题(中): 电压放电电路及方法
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申请号: US12893400申请日: 2010-09-29
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公开(公告)号: US08270224B2公开(公告)日: 2012-09-18
- 发明人: Agostino Macerola
- 申请人: Agostino Macerola
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Leffert Jay & Polglaze, P.A.
- 主分类号: G11C16/06
- IPC分类号: G11C16/06
摘要:
Memory devices, memory systems, discharge circuits, and methods for discharging a capacitance are disclosed. In one such memory device, a discharge circuit is coupled to memory support circuitry. When a supply voltage decreases to be less than or equal to a trip voltage, the discharge circuit discharges a voltage from a capacitance of the memory support circuitry.
公开/授权文献
- US20120075935A1 VOLTAGE DISCHARGE CIRCUITS AND METHODS 公开/授权日:2012-03-29
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