A semiconductor light-emitting device is provided. The semiconductor light-emitting device comprises a plurality of compound semiconductor layers, an electrode layer, and a conductive support member. The compound semiconductor layers comprise a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. The electrode layer is disposed under the compound semiconductor layers. The conductive support member is disposed under the electrode layer. Herein, the conductive support member has a thermal expansion coefficient difference within about 50% with respect to the compound semiconductor layer.