Invention Grant
US08268735B2 Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface
有权
用于降低半导体表面的微粗糙度的半导体器件制造方法和方法
- Patent Title: Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface
- Patent Title (中): 用于降低半导体表面的微粗糙度的半导体器件制造方法和方法
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Application No.: US12223385Application Date: 2007-01-30
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Publication No.: US08268735B2Publication Date: 2012-09-18
- Inventor: Tadahiro Ohmi , Hitoshi Morinaga
- Applicant: Tadahiro Ohmi , Hitoshi Morinaga
- Applicant Address: JP Sendai-Shi JP Tsukuba-Shi
- Assignee: Tohoku University,Foundation for Advancement of International Science
- Current Assignee: Tohoku University,Foundation for Advancement of International Science
- Current Assignee Address: JP Sendai-Shi JP Tsukuba-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2006-024755 20060201
- International Application: PCT/JP2007/051487 WO 20070130
- International Announcement: WO2007/088848 WO 20070809
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Surface treatment is performed with a liquid, while shielding a semiconductor surface from light. When the method is employed for surface treatment in wet processes such as cleaning, etching and development of the semiconductor surface, increase of surface microroughness can be reduced. Thus, electrical characteristics and yield of the semiconductor device are improved.
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