Invention Grant
- Patent Title: High-yield method of exposing and contacting through-silicon vias
- Patent Title (中): 暴露和接触硅通孔的高产率方法
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Application No.: US12352718Application Date: 2009-01-13
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Publication No.: US08263497B2Publication Date: 2012-09-11
- Inventor: Paul S. Andry , John M. Cotte , Michael F. Lofaro , Edmund J. Sprogis , James A. Tornello , Cornelia K. Tsang
- Applicant: Paul S. Andry , John M. Cotte , Michael F. Lofaro , Edmund J. Sprogis , James A. Tornello , Cornelia K. Tsang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461

Abstract:
An assembly including a main wafer having a body with a front side and a back side and a plurality of blind electrical vias terminating above the back side, and a handler wafer, is obtained. A step includes exposing the blind electrical vias to various heights on the back side. Another step involves applying a first chemical mechanical polish process to the back side, to open any of the surrounding insulator adjacent the end regions of the cores remaining after the exposing step, and to co-planarize the via conductive cores, the surrounding insulator adjacent the side regions of the cores, and the body of the main wafer. Further steps include etching the back side to produce a uniform standoff height of each of the vias across the back side; depositing a dielectric across the back side; and applying a second chemical mechanical polish process to the back side.
Public/Granted literature
- US20100178766A1 HIGH-YIELD METHOD OF EXPOSING AND CONTACTING THROUGH-SILICON VIAS Public/Granted day:2010-07-15
Information query
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