Invention Grant
- Patent Title: Method for manufacturing electret diaphragm
- Patent Title (中): 驻极体膜片制造方法
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Application No.: US12605142Application Date: 2009-10-23
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Publication No.: US08262824B2Publication Date: 2012-09-11
- Inventor: Fang Ching Lee
- Applicant: Fang Ching Lee
- Applicant Address: TW Taoyuan County
- Assignee: HTC Corporation
- Current Assignee: HTC Corporation
- Current Assignee Address: TW Taoyuan County
- Priority: TW97141128A 20081027
- Main IPC: H04R7/22
- IPC: H04R7/22

Abstract:
A method for manufacturing electret diaphragms is provided. First, a dielectric film is attached to a frame by an adhesive material and a fastening element grips the peripheral area of the dielectric film on the frame. Afterward, the dielectric film is subjected to a metal sputtering process to form a conductive material layer thereon. Finally, the dielectric film is subjected to a polarizing process thereby forming an electret diaphragm.
Public/Granted literature
- US20100101703A1 METHOD FOR MANUFACTURING ELECTRET DIAPHRAGM Public/Granted day:2010-04-29
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