Invention Grant
US08247093B2 Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device
有权
磁性多层器件，制造这种器件的方法，磁场传感器，磁存储器和使用这种器件的逻辑门
- Patent Title: Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device
- Patent Title (中): 磁性多层器件，制造这种器件的方法，磁场传感器，磁存储器和使用这种器件的逻辑门
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Application No.: US11959816Application Date: 2007-12-19
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Publication No.: US08247093B2Publication Date: 2012-08-21
- Inventor: Bernard Rodmacq , Stéphane Auffret , Bernard Dieny , Jérôme Moritz
- Applicant: Bernard Rodmacq , Stéphane Auffret , Bernard Dieny , Jérôme Moritz
- Applicant Address: FR Paris FR Paris
- Assignee: Commissariat a l'Energie Atomique,Centre National de la Recherche Scientifique
- Current Assignee: Commissariat a l'Energie Atomique,Centre National de la Recherche Scientifique
- Current Assignee Address: FR Paris FR Paris
- Agency: Burr & Brown
- Priority: FR0655943 20061226
- Main IPC: G11B5/33
- IPC: G11B5/33
Abstract:
This magnetic multilayer device comprises, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O. The number of layers M equals at least two. The layers M are continuous. There is interfacial magnetic anisotropy perpendicular to the plane of the layers at the level of the M/O interfaces.
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