发明授权
US08241426B2 CMP polishing method, CMP polishing apparatus, and process for producing semiconductor device
有权
CMP抛光方法,CMP抛光装置以及半导体装置的制造方法
- 专利标题: CMP polishing method, CMP polishing apparatus, and process for producing semiconductor device
- 专利标题(中): CMP抛光方法,CMP抛光装置以及半导体装置的制造方法
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申请号: US11795697申请日: 2005-12-21
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公开(公告)号: US08241426B2公开(公告)日: 2012-08-14
- 发明人: Syozo Takada , Hisanori Matsuo , Akira Ishikawa
- 申请人: Syozo Takada , Hisanori Matsuo , Akira Ishikawa
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Nikon Corporation,EBARA Corporation
- 当前专利权人: Nikon Corporation,EBARA Corporation
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Morgan, Lewis & Bockius LLP
- 优先权: JP2005-013734 20050121
- 国际申请: PCT/JP2005/024001 WO 20051221
- 国际公布: WO2006/077730 WO 20060727
- 主分类号: B08B3/12
- IPC分类号: B08B3/12 ; B08B6/00 ; B08B7/00 ; B08B7/02
摘要:
When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.
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