Invention Grant
US08237347B2 Field emission device having secondary electron enhancing electrode
有权
具有二次电子增强电极的场致发射器件
- Patent Title: Field emission device having secondary electron enhancing electrode
- Patent Title (中): 具有二次电子增强电极的场致发射器件
-
Application No.: US12959592Application Date: 2010-12-03
-
Publication No.: US08237347B2Publication Date: 2012-08-07
- Inventor: Peng Liu , Duan-Liang Zhou , Pi-Jin Chen , Zhao-Fu Hu , Cai-Lin Guo , Bing-Chu Du , Shou-Shan Fan
- Applicant: Peng Liu , Duan-Liang Zhou , Pi-Jin Chen , Zhao-Fu Hu , Cai-Lin Guo , Bing-Chu Du , Shou-Shan Fan
- Applicant Address: CN Beijing TW Tu-Cheng, New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW Tu-Cheng, New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN201010178218 20100520
- Main IPC: H01J1/304
- IPC: H01J1/304 ; H01J1/62

Abstract:
A field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.
Public/Granted literature
- US20110285271A1 FIELD EMISSION DEVICE Public/Granted day:2011-11-24
Information query