Invention Grant
- Patent Title: Enhanced low energy ion beam transport in ion implantation
- Patent Title (中): 离子注入中增强的低能量离子束传输
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Application No.: US12357973Application Date: 2009-01-22
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Publication No.: US08237135B2Publication Date: 2012-08-07
- Inventor: Bo H. Vanderberg , William F. DiVergilio
- Applicant: Bo H. Vanderberg , William F. DiVergilio
- Applicant Address: US MA Beverly
- Assignee: Axcelis Technologies, Inc.
- Current Assignee: Axcelis Technologies, Inc.
- Current Assignee Address: US MA Beverly
- Agency: Eschweiler & Associates, LLC
- Main IPC: A61N5/00
- IPC: A61N5/00 ; G21G5/00

Abstract:
An ion implantation method and system that incorporate beam neutralization to mitigate beam blowup, which can be particularly problematic in low-energy, high-current ion beams. The beam neutralization component can be located in the system where blowup is likely to occur. The neutralization component includes a varying energizing field generating component that generates plasma that neutralizes the ion beam and thereby mitigates beam blowup. The energizing field is generated with varying frequency and/or field strength in order to maintain the neutralizing plasma while mitigating the creation of plasma sheaths that reduce the effects of the neutralizing plasma.
Public/Granted literature
- US20100181499A1 ENHANCED LOW ENERGY ION BEAM TRANSPORT IN ION IMPLANTATION Public/Granted day:2010-07-22
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