发明授权
- 专利标题： Diamond semiconductor element and process for producing the same
- 专利标题（中）： 金刚石半导体元件及其制造方法
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申请号： US12023660申请日： 2008-01-31
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公开(公告)号： US08221548B2公开(公告)日： 2012-07-17
- 发明人: Makoto Kasu , Toshiki Makimoto , Kenji Ueda , Yoshiharu Yamauchi
- 申请人： Makoto Kasu , Toshiki Makimoto , Kenji Ueda , Yoshiharu Yamauchi
- 申请人地址： JP Tokyo
- 专利权人： Nippon Telegraph and Telephone Corporation
- 当前专利权人： Nippon Telegraph and Telephone Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Workman Nydegger
- 优先权： JP2005-179751 20050620; JP2005-270541 20050916; JP2005-307231 20051021; JP2006-061838 20060307
- 主分类号： C30B25/22
- IPC分类号： C30B25/22
摘要：
A process for producing a diamond thin-film includes forming a diamond crystal thin-film on a substrate and firing the diamond crystal thin-film at a sufficient temperature under high pressure under which a diamond is stable. A diamond single-crystal substrate having a diamond single-crystal thin-film formed thereon is placed in an ultra-high-pressure and high-temperature firing furnace to anneal the diamond single-crystal thin-film under the conditions of 1200° C. and 6 GPa.
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