Invention Grant
- Patent Title: Methods of cooling semiconductor dies
- Patent Title (中): 冷却半导体管芯的方法
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Application No.: US12855562Application Date: 2010-08-12
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Publication No.: US08207016B2Publication Date: 2012-06-26
- Inventor: Chandra Mouli , Gurtej S. Sandhu
- Applicant: Chandra Mouli , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The invention includes semiconductor packages having grooves within a semiconductor die backside; and includes semiconductor packages utilizing carbon nanostructures (such as, for example, carbon nanotubes) as thermally conductive interface materials. The invention also includes methods of cooling a semiconductor die in which coolant is forced through grooves in a backside of the die, and includes methods of making semiconductor packages.
Public/Granted literature
- US20100302740A1 Methods of cooling semiconductor dies Public/Granted day:2010-12-02
Information query
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