Invention Grant
- Patent Title: Reducing program disturb in non-volatile storage
- Patent Title (中): 在非易失性存储中减少程序干扰
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Application No.: US11535628Application Date: 2006-09-27
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Publication No.: US08189378B2Publication Date: 2012-05-29
- Inventor: Gerrit Jan Hemink , Shih-Chung Lee
- Applicant: Gerrit Jan Hemink , Shih-Chung Lee
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A non-volatile semiconductor storage system is programmed in a manner that reduces program disturb by applying a higher boosting voltage on one or more word lines that are connected to non-volatile storage elements that may be partially programmed.
Public/Granted literature
- US20080084747A1 REDUCING PROGRAM DISTURB IN NON-VOLATILE STORAGE Public/Granted day:2008-04-10
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