Invention Grant
- Patent Title: Semiconductor device having coupling elimination circuit
- Patent Title (中): 具有耦合消除电路的半导体器件
-
Application No.: US12318581Application Date: 2008-12-31
-
Publication No.: US08184485B2Publication Date: 2012-05-22
- Inventor: Chang-Soo Lee
- Applicant: Chang-Soo Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2008-0000015 20080102
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A semiconductor device including a plurality of repairable signal lines, the device including a first driver adapted to maintain a first portion of each defective one of the repairable signal lines at a first voltage level, and a second driver adapted to drive a second portion of each of the defective ones of the repairable signal lines being repaired to the first voltage level.
Public/Granted literature
- US20090172465A1 Semiconductor device having coupling elimination circuit Public/Granted day:2009-07-02
Information query
