Invention Grant
- Patent Title: Superconducting device and method of manufacturing the same
- Patent Title (中): 超导装置及其制造方法
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Application No.: US11806175Application Date: 2007-05-30
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Publication No.: US08178472B2Publication Date: 2012-05-15
- Inventor: Yoshihiro Ishimaru , Yoshinobu Tarutani , Keiichi Tanabe
- Applicant: Yoshihiro Ishimaru , Yoshinobu Tarutani , Keiichi Tanabe
- Applicant Address: JP Kawasaki JP Tokyo
- Assignee: Fujitsu Limited,International Superconductivity Technology Center, The Juridical Foundation
- Current Assignee: Fujitsu Limited,International Superconductivity Technology Center, The Juridical Foundation
- Current Assignee Address: JP Kawasaki JP Tokyo
- Agency: Krats, Quintos & Hanson, LLP
- Priority: JP2006-149652 20060530
- Main IPC: H01L39/22
- IPC: H01L39/22
Abstract:
The present invention provides a superconducting device including a substrate, a first superconducting pattern formed on the substrate, an insulating pattern formed on the first superconducting pattern, and a second superconducting pattern formed at the uppermost level in the multilayered superconducting pattern. A barrier layer of a Josephson junction is formed on the lower side of, or within the second superconducting pattern. The second superconducting pattern constitutes a circuit element on the insulating pattern.
Public/Granted literature
- US20070281861A1 Superconducting device and method of manufacturing the same Public/Granted day:2007-12-06
Information query
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