- 专利标题： Semiconductor device and method for manufacturing the same
-
申请号： US13287188申请日： 2011-11-02
-
公开(公告)号： US08169082B2公开(公告)日： 2012-05-01
- 发明人: Tetsuo Fujii , Akitoshi Yamanaka , Hisanori Yokura
- 申请人： Tetsuo Fujii , Akitoshi Yamanaka , Hisanori Yokura
- 申请人地址： JP Kariya
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2008-321218 20081217; JP2008-330252 20081225; JP2009-138031 20090609
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.
公开/授权文献
信息查询
IPC分类:
