发明授权
- 专利标题： Semiconductor devices including first and second silicon interconnection regions
- 专利标题（中）： 包括第一和第二硅互连区域的半导体器件
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申请号： US12827375申请日： 2010-06-30
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公开(公告)号： US08169074B2公开(公告)日： 2012-05-01
- 发明人: Jong-Man Park , Santoru Yamada
- 申请人： Jong-Man Park , Santoru Yamada
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2009-0067466 20090723
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a first interconnection disposed on a substrate. The interconnection includes a first silicon interconnection region and a first metal interconnection region sequentially stacked on the substrate. A second interconnection includes a second silicon interconnection region and a second metal interconnection region that are stacked sequentially. The second silicon interconnection region has a lower resistivity than the first silicon interconnection region.
公开/授权文献
- US20110020993A1 Semiconductor Device and Method of Fabricating the Same 公开/授权日：2011-01-27
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