发明授权
- 专利标题： Plasma generation system and plasma generation method
- 专利标题（中）： 等离子体发生系统和等离子体生成方法
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申请号： US11992007申请日： 2006-08-11
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公开(公告)号： US08168130B2公开(公告)日： 2012-05-01
- 发明人: Takehiko Sato , Tatsuyuki Nakatani , Tatsuo Kimura
- 申请人： Takehiko Sato , Tatsuyuki Nakatani , Tatsuo Kimura
- 申请人地址： JP Hiroshima
- 专利权人： Toyo Advanced Technologies Co., Ltd.
- 当前专利权人： Toyo Advanced Technologies Co., Ltd.
- 当前专利权人地址： JP Hiroshima
- 优先权： JP2005-269989 20050916
- 国际申请： PCT/JP2006/315958 WO 20060811
- 国际公布： WO2007/032172 WO 20070322
- 主分类号： B01J19/08
- IPC分类号： B01J19/08 ; A61L9/00 ; H05H1/24
摘要：
A method and system for surely and conveniently generating plasma in a narrow tube having a small diameter.A first electrode formed by a conductive member covered with an insulator or dielectric is inserted into a narrow tube. The narrow tube is located on a second electrode. A power supply applies an alternating voltage or pulse voltage between the first electrode and the second electrode so that plasma is generated in the narrow tube around the first electrode.
公开/授权文献
- US20100065415A1 Plasma Generation System and Plasma Generation Method 公开/授权日：2010-03-18
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