发明授权
- 专利标题： Alignment mark arrangement and alignment mark structure
- 专利标题（中）： 对齐标记布置和对准标记结构
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申请号： US12478778申请日： 2009-06-05
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公开(公告)号： US08164753B2公开(公告)日： 2012-04-24
- 发明人: An-Hsiung Liu , Chun-Yen Huang , Ming-Hung Hsieh
- 申请人： An-Hsiung Liu , Chun-Yen Huang , Ming-Hung Hsieh
- 申请人地址： TW Kueishan, Tao-Yuan Hsien
- 专利权人： Nanya Technology Corp.
- 当前专利权人： Nanya Technology Corp.
- 当前专利权人地址： TW Kueishan, Tao-Yuan Hsien
- 代理商 Winston Hsu; Scott Margo
- 主分类号： G01B11/00
- IPC分类号： G01B11/00
摘要：
An alignment mark arrangement includes: a first alignment pattern comprising a plurality of parallel first stripes on a substrate, wherein each of the first stripes includes a first dimension; and a second alignment pattern positioned directly above and overlapping with the first alignment pattern, the second alignment pattern including a plurality of parallel second stripes, wherein each of the second stripes of the second alignment pattern has a second dimension that is larger than the first dimension of each of the first stripes of the first alignment pattern.
公开/授权文献
- US20100309470A1 ALIGNMENT MARK ARRANGEMENT AND ALIGNMENT MARK STRUCTURE 公开/授权日：2010-12-09
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