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US08164119B2 Semiconductor device including conductive lines with fine line width and method of fabricating the same 有权
包括具有细线宽度的导线的半导体器件及其制造方法

Semiconductor device including conductive lines with fine line width and method of fabricating the same
摘要：
A semiconductor device comprises a semiconductor substrate including a first core region and a second core region between which a cell array region is interposed, a first conductive line and a second conductive line extending to the first core region across the cell array region, and a third conductive line and a fourth conductive line extending to the second core region across the cell array region, wherein a line width of the first through fourth conductive lines is smaller than a resolution limit in a lithography process.
摘要（中）：

半导体器件包括半导体衬底，该半导体衬底包括第一芯区域和第二芯区域，第一芯区域和第二芯区域之间插入有单元阵列区域，第一导电线路和延伸到跨越单元阵列区域的第一芯区域的第二导电线， 导电线和延伸到跨越单元阵列区域的第二芯区的第四导线，其中第一至第四导线的线宽小于光刻工艺中的分辨率极限。

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