Invention Grant
US08148191B2 Combined etching and doping media 有权
组合蚀刻和掺杂介质

Combined etching and doping media
Abstract:
The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. The present invention secondly also relates to a process in which these media are employed.
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