An improved wafer-to-wafer bonding method includes aligning an upper and a lower wafer and initiating a bond at a single point by applying pressure to a single point of the upper wafer via the flow of pressurized gas through a port terminating at the single point. The bond-front propagates radially across the aligned oppositely oriented wafer surfaces at a set radial velocity rate bringing the two wafer surfaces into full atomic contact by controlling the gas pressure and/or controlling the velocity of the motion of the lower wafer up toward the upper wafer.