发明授权
US08140041B2 Tunable capacitive device with linearization technique employed therein 有权
其中采用线性化技术的可调电容器件

  • 专利标题: Tunable capacitive device with linearization technique employed therein
  • 专利标题(中): 其中采用线性化技术的可调电容器件
  • 申请号: US12548454
    申请日: 2009-08-27
  • 公开(公告)号: US08140041B2
    公开(公告)日: 2012-03-20
  • 发明人: Wen-Chang Lee
  • 申请人: Wen-Chang Lee
  • 申请人地址: TW Science-Based Industrial Park, Hsin-Chu
  • 专利权人: Mediatek Inc.
  • 当前专利权人: Mediatek Inc.
  • 当前专利权人地址: TW Science-Based Industrial Park, Hsin-Chu
  • 代理商 Winston Hsu; Scott Margo
  • 主分类号: H04B1/06
  • IPC分类号: H04B1/06 H04B7/00
Tunable capacitive device with linearization technique employed therein
摘要:
One exemplary tunable capacitive device includes a first tunable capacitive element, a first coupling capacitive element, a first coupling resistive element, and a first specific capacitive element. The first tunable capacitive element has a first node coupled to a first input voltage, and a second node. The first coupling capacitive element has a first node coupled to the second node of the first tunable capacitive element, and a second node coupled to a first connection terminal of the tunable capacitive device. The first coupling resistive element has a first node coupled to the second node of the first tunable capacitive element, and a second node coupled to a second input voltage, where the first input voltage and the second input voltage include a control voltage and a reference voltage. The first specific capacitive element is coupled between the first node and the second node of the first tunable capacitive element.
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