发明授权
- 专利标题： Layout structure of MOSFET and layout method thereof
- 专利标题（中）： MOSFET的布局结构及其布局方法
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申请号： US12616142申请日： 2009-11-11
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公开(公告)号： US08138557B2公开(公告)日： 2012-03-20
- 发明人: Kuo-Wei Peng , Zhong-Wei Liu , Qian-Hua Zhou
- 申请人： Kuo-Wei Peng , Zhong-Wei Liu , Qian-Hua Zhou
- 申请人地址： TW New Taipei
- 专利权人： Green Solution Technology Co., Ltd.
- 当前专利权人： Green Solution Technology Co., Ltd.
- 当前专利权人地址： TW New Taipei
- 代理机构： Jianq Chyun IP Office
- 主分类号： H01L29/41
- IPC分类号： H01L29/41
摘要：
A layout structure of a MOSFET is provided. The layout structure of the MOSFET includes a plurality of MOSFET cells, a first source/drain metal bus structure and a second source/drain metal bus structure. The first source/drain metal bus structure is electrically connected to first sources/drains of the MOSFET cells, and a width thereof is gradually decreased in a predetermined direction. The second source/drain metal bus structure is electrically connected to second sources/drains of the MOSFET cells, and a width thereof is gradually increased in the predetermined direction.
公开/授权文献
- US20110113397A1 LAYOUT STRUCTURE OF MOSFET AND LAYOUT METHOD THEREOF 公开/授权日：2011-05-12
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