发明授权
- 专利标题: Three-dimensional semiconductor device
- 专利标题(中): 三维半导体器件
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申请号: US11788974申请日: 2007-04-23
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公开(公告)号: US08134235B2公开(公告)日: 2012-03-13
- 发明人: Wen-Chih Chiou , David Ding-Chung Lu
- 申请人: Wen-Chih Chiou , David Ding-Chung Lu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A three-dimensional semiconductor device using redundant bonding-conductor structures to make inter-level electrical connections between multiple semiconductor chips. A first chip, or other semiconductor substrate, forms a first active area on its upper surface, and a second chip or other semiconductor substrate forms a second active area on its upper surface. According to the present invention, when the second chip has been mounted above the first chip, either face-up or face-down, the first active area is coupled to the second active area by at least one redundant bonding-conductor structure. In one embodiment, each redundant bonding-conductor structure includes at least one via portion that extends completely through the second chip to perform this function. In another, the redundant bonding-conductor structure extends downward to the top level interconnect. The present invention also includes a method for making such a device.
公开/授权文献
- US20080258309A1 Three-dimensional semiconductor device 公开/授权日:2008-10-23
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