Invention Grant
- Patent Title: Capacitor and method of manufacturing the same
- Patent Title (中): 电容器及其制造方法
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Application No.: US12659553Application Date: 2010-03-12
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Publication No.: US08124978B2Publication Date: 2012-02-28
- Inventor: Hyun-Young Kim , Rak-Hwan Kim , Young-Joo Cho , Won-sik Shin
- Applicant: Hyun-Young Kim , Rak-Hwan Kim , Young-Joo Cho , Won-sik Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR2004-85672 20041026
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/786 ; H01L27/108 ; H01L29/94
Abstract:
A capacitor and method of manufacturing the same include an insulating interlayer, a lower electrode, a protection structure, a dielectric layer and an upper electrode. The insulating interlayer may include a conductive pattern formed on a substrate. The lower electrode may be electrically connected to the conductive pattern. The protection structure may be formed on an outer sidewall of the cylindrical lower electrode and on the insulating interlayer.
Public/Granted literature
- US20100188795A1 Capacitor and method of manufacturing the same Public/Granted day:2010-07-29
Information query
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