发明授权
US08122329B2 Methods of operating memory devices using error correction and rereading techniques
有权
使用纠错和重新读取技术来操作存储器件的方法
- 专利标题： Methods of operating memory devices using error correction and rereading techniques
- 专利标题（中）： 使用纠错和重新读取技术来操作存储器件的方法
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申请号： US12929161申请日： 2011-01-05
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公开(公告)号： US08122329B2公开(公告)日： 2012-02-21
- 发明人: Jun Jin Kong , Sung Chung Park , Dongku Kang , Dong Hyuk Chae , Seung Jae Lee , Nam Phil Jo , Seung-Hwan Song
- 申请人： Jun Jin Kong , Sung Chung Park , Dongku Kang , Dong Hyuk Chae , Seung Jae Lee , Nam Phil Jo , Seung-Hwan Song
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec, P.A.
- 优先权： KR10-2007-0030396 20070328
- 主分类号： H03M13/00
- IPC分类号： H03M13/00 ; G11C29/00
摘要：
Various read level control apparatuses and methods are provided. In various embodiments, the read level control apparatuses may include an error control code (ECC) decoding unit for ECC decoding data read from a storage unit, and a monitoring unit for monitoring a bit error rate (BER) based on the ECC decoded data and the read data. The apparatus may additionally include an error determination unit for determining an error rate of the read data based on the monitored BER, and a level control unit for controlling a read level of the storage unit based on the error rate.
公开/授权文献
- US20110145663A1 Read level control apparatuses and methods 公开/授权日：2011-06-16
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