- 专利标题: JTAG controlled self-repair after packaging
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申请号: US12906764申请日: 2010-10-18
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公开(公告)号: US08122304B2公开(公告)日: 2012-02-21
- 发明人: Yoshinori Fujiwara , Masayoshi Nomura
- 申请人: Yoshinori Fujiwara , Masayoshi Nomura
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dorsey & Whitney LLP
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G01R31/28 ; G11C17/18
摘要:
An integrated circuit containing memory includes IEEE 1149.1 (JTAG) controlled self-repair system that permits permanent repair of the memory after the integrated circuit has been packaged. The JTAG controlled self-repair system allows a user to direct circuitry to blow fuses using an externally supplied voltage to electrically couple or isolate components to permanently repair a memory location with JTAG standard TMS and TCK signals. The system may optionally sequentially repair more than one memory location using a repair sequencer.
公开/授权文献
- US20110035635A1 JTAG CONTROLLED SELF-REPAIR AFTER PACKAGING 公开/授权日:2011-02-10
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