发明授权
US08119541B2 Modulation of stress in stress film through ion implantation and its application in stress memorization technique
有权
通过离子注入调制应力薄膜中的应力及其在应力记忆技术中的应用
- 专利标题： Modulation of stress in stress film through ion implantation and its application in stress memorization technique
- 专利标题（中）： 通过离子注入调制应力薄膜中的应力及其在应力记忆技术中的应用
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申请号： US12510276申请日： 2009-07-28
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公开(公告)号： US08119541B2公开(公告)日： 2012-02-21
- 发明人: Lee Wee Teo , Elgin Quek
- 申请人： Lee Wee Teo , Elgin Quek
- 申请人地址： SG Singapore
- 专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人： GLOBALFOUNDRIES Singapore Pte. Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Horizon IP Pte Ltd
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; H01L21/31
摘要：
Some example embodiments of the invention provide a method to improve the performance of MOS devices by increasing the stress in the channel region. An example embodiment for a NMOS transistor is to form a tensile stress layer over a NMOS transistor. A heavy ion implantation is performed into the stress layer and then an anneal is performed. This increases the amount of stress from the stress layer that the gate retains/memorizes thereby increasing device performance.
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