发明授权
- 专利标题： Semiconductor device manufacturing method
- 专利标题（中）： 半导体器件制造方法
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申请号： US12945446申请日： 2010-11-12
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公开(公告)号： US08119519B2公开(公告)日： 2012-02-21
- 发明人: Satoshi Kageyama
- 申请人： Satoshi Kageyama
- 申请人地址： JP Kyoto
- 专利权人： Rohm Co., Ltd.
- 当前专利权人： Rohm Co., Ltd.
- 当前专利权人地址： JP Kyoto
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2004-310735 20041026
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method for making a semiconductor device including at least three interconnection layers sequentially stacked without intervention of a via layer. At least one of the interconnection layers includes an interconnection and a via which connects interconnections provided in interconnection layers underlying and overlying the one interconnection layer.
公开/授权文献
- US20110059607A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 公开/授权日：2011-03-10
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