发明授权
- 专利标题： Memory device employing magnetic domain wall movement
- 专利标题（中）： 采用磁畴壁运动的记忆装置
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申请号： US11850988申请日： 2007-09-06
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公开(公告)号： US08115238B2公开(公告)日： 2012-02-14
- 发明人: Chee-kheng Lim , Eun-sik Kim , In-jun Hwang
- 申请人： Chee-kheng Lim , Eun-sik Kim , In-jun Hwang
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2006-0089652 20060915
- 主分类号： H01L27/148
- IPC分类号： H01L27/148
摘要：
Provided is a memory device employing magnetic domain wall movement. The memory device includes a writing track and a column structure. The writing track forms magnetic domains that have predetermined magnetization directions. The column structure is formed on the writing track and includes at least one interconnecting layer and at least one storage track.
公开/授权文献
- US20080068880A1 MEMORY DEVICE EMPLOYING MAGNETIC DOMAIN WALL MOVEMENT 公开/授权日：2008-03-20
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